| Research Projects |
Advisor |
Budget |
Duration |
Optimal Train Regulation and Optimal Train Profile Control of Metro Line
NSC98-2221-E-002-145 |
Lin, Wei-Song |
620000 |
2009-08-01 ~ 2010-07-31 |
Material and process technology of compact waveguide devices --Theoretical modeling of waveguide propagation characteristics
|
Chiou, Yih-Peng |
300000 |
2004-01-01 ~ 2004-09-30 |
Optical properties and device applications of photonic crystals
NSC 93--2215-E-002-039 |
Chiou, Yih-Peng |
665600 |
2004-08-01 ~ 2005-07-31 |
Applications of dispersive and metallic photonic crystals in lighting and photovoltaics
94-2215-E-002-027- |
Chiou, Yih-Peng |
575000 |
2005-08-01 ~ 2006-07-01 |
Hardware Implementation of Finite-Difference Time-Domain Algorithm for the Simulation of Optoelectronic Devices
NSC 95-2221-E-002 -285 |
Chiou, Yih-Peng |
787000 |
2006-08-01 ~ 2007-07-01 |
Enhancement of Lighting Extraction Efficiency in Display ande Lighting Devices
NSC 96-2221-E-002 -172 |
Chiou, Yih-Peng |
978000 |
2007-08-01 ~ 2008-07-01 |
Development and Applications of Modeling in Micro-Structured Photovoltaic Devices
NSC 98-2221-E-002 -170 -MY3 |
Chiou, Yih-Peng |
2242000 |
2009-08-01 ~ 2012-07-01 |
Study on the Process Development and Electrical Characterization of High-k Gate Dielectrics by Liquid Phase Oxidation Technique
|
Hwu, Jenn-Gwo |
800000 |
2004-01-01 ~ 2004-12-31 |
Process Development of Ultra-thin Gate Dielectrics and Novel Device Applications of Silicon MOS Structure (1/3)
NSC 93-2215-E-002-016 |
Hwu, Jenn-Gwo |
1473800 |
2004-08-01 ~ 2005-07-31 |
Study on The Oxide Uniformity and Stress Effect in Rapid Thermal Processing (3/3)
NSC 93-2215-E-002-001 |
Hwu, Jenn-Gwo |
1309000 |
2004-08-01 ~ 2005-07-31 |
Study of Advanced CMOS Devices and Processes - Subproject 1: Technologies of Forming High Quality Insulating Films for Low Substrate Temperarue Process (1/3)
NSC 94-2215-E-002-044 |
Hwu, Jenn-Gwo |
1377000 |
2005-08-01 ~ 2006-07-31 |
Study of Advanced CMOS Devices and Processes (1/3)
NSC 94-2215-E-002-047 |
Hwu, Jenn-Gwo |
2485000 |
2005-08-01 ~ 2006-07-31 |
Process Development of Ultra-thin Gate Dielectrics and Novel Device Applications of Silicon MOS Structure (2/3)
NSC 94-2215-E-002-004 |
Hwu, Jenn-Gwo |
1659000 |
2005-08-01 ~ 2006-07-31 |
Research and Development of Micro Electronics Division (1/3)
NSC 94-2217-E-002-016 |
Hwu, Jenn-Gwo |
929000 |
2005-12-01 ~ 2006-11-30 |
Process Development of Ultra-thin Gate Dielectrics and Novel Device Applications of Silicon MOS Structure (3/3)
NSC 95-2221-E-002-375 |
Hwu, Jenn-Gwo |
1706000 |
2006-08-01 ~ 2007-07-31 |
Study of Advanced CMOS Devices and Processes (2/3)
NSC 95-2221-E-002-367 |
Hwu, Jenn-Gwo |
2307000 |
2006-08-01 ~ 2007-07-31 |
Study of Advanced CMOS Devices and Processes - Subproject 1: Technologies of Forming High Quality Insulating Films for Low Substrate Temperarue Process (2/3)
NSC 95-2221-E-002-358 |
Hwu, Jenn-Gwo |
1587000 |
2006-08-01 ~ 2007-07-31 |
Research and Development of Micro Electronics Division (2/3)
NSC 95-2217-E-002-002 |
Hwu, Jenn-Gwo |
1017000 |
2006-12-01 ~ 2007-11-30 |
Study of Advanced CMOS Devices and Processes (3/3)
NSC 96-2221-E-002-286 |
Hwu, Jenn-Gwo |
1797000 |
2007-08-01 ~ 2008-07-31 |
Study of Advanced CMOS Devices and Processes - Subproject 1: Technologies of Forming High Quality Insulating Films for Low Substrate Temperarue Process (3/3)
NSC 96-2221-E-002-244 |
Hwu, Jenn-Gwo |
1587000 |
2007-08-01 ~ 2008-07-31 |
Novel Process Development for Ultra-thin Insulators and Its Application on Silicon MOS Devices (1/3)
NSC 96-2628-E-002-246-MY3 |
Hwu, Jenn-Gwo |
1285000 |
2007-08-01 ~ 2010-07-31 |
Research and Development of Micro Electronics Division (3/3)
NSC 96-2217-E-002-002 |
Hwu, Jenn-Gwo |
1147000 |
2007-12-01 ~ 2008-12-31 |
Novel Process Development for Ultra-thin Insulators and Its Application on Silicon MOS Devices (2/3)
NSC96-2628-E-002-246-MY3 |
Hwu, Jenn-Gwo |
1777000 |
2008-08-01 ~ 2010-07-31 |
Main Project: Enabling technologies to enhance post-Si electronics(1/3)
NSC97-2221-E-002-233-MY3 |
Hwu, Jenn-Gwo |
1887000 |
2008-08-01 ~ 2011-07-31 |
Enabling technologies to enhance post-Si electronics - Subproject 1: Novel Dielectrics on SiC(1/3)
NSC97-2221-E-002-231-MY3 |
Hwu, Jenn-Gwo |
1920000 |
2008-08-01 ~ 2011-07-31 |
Novel Process Development for Ultra-thin Insulators and Its Application on Silicon MOS Devices (3/3)
NSC96-2628-E-002-246-MY3 |
Hwu, Jenn-Gwo |
1777000 |
2009-08-01 ~ 2010-07-31 |
Main Project: Enabling technologies to enhance post-Si electronics(2/3)
NSC97-2221-E-002-233-MY3 |
Hwu, Jenn-Gwo |
2150000 |
2009-08-01 ~ 2011-07-31 |
Enabling technologies to enhance post-Si electronics - Subproject 1: Novel Dielectrics on SiC(2/3)
NSC97-2221-E-002-231-MY3 |
Hwu, Jenn-Gwo |
1692000 |
2009-08-01 ~ 2011-07-31 |
Enabling technologies to enhance post-Si electronics - Subproject 1: Novel Dielectrics on SiC(3/3)
NSC97-2221-E-002-231-MY3 |
Hwu, Jenn-Gwo |
1812000 |
2010-08-01 ~ 2011-07-31 |
Main Project: Enabling technologies to enhance post-Si electronics(3/3)
NSC97-2221-E-002-233-MY3 |
Hwu, Jenn-Gwo |
2064000 |
2010-08-01 ~ 2011-07-31 |
Process Technology and Device Application for High Quality Ultra-thin Gate Oxides (1/3)
NSC99-2221-E-002-197-MY3 |
Hwu, Jenn-Gwo |
1269000 |
2010-08-01 ~ 2013-07-31 |
Process Technology and Device Application for High Quality Ultra-thin Gate Oxides (2/3)
NSC99-2221-E-002-197-MY3 |
Hwu, Jenn-Gwo |
1975000 |
2011-08-01 ~ 2013-07-31 |
Main-project : Enhancement Technologies for Advanced CMOS(1/3)
NSC100-2221-E-002-057-MY3 |
Hwu, Jenn-Gwo |
1464000 |
2011-08-01 ~ 2014-07-31 |
Enhancement Technologies for Advanced CMOS - Subproject 1 : Electrical Characterization of MOS Structures with Ultra-thin Gate Insulators Grown on Non-planar Si Substrate (1/3)
NSC100-2221-E-002-055-MY3 |
Hwu, Jenn-Gwo |
1101000 |
2011-08-01 ~ 2014-07-31 |
Process Technology and Device Application for High Quality Ultra-thin Gate Oxides (3/3)
NSC99-2221-E-002-197-MY3 |
Hwu, Jenn-Gwo |
1975000 |
2012-08-01 ~ 2013-07-31 |
Main-project : Enhancement Technologies for Advanced CMOS(2/3)
NSC100-2221-E-002-057-MY3 |
Hwu, Jenn-Gwo |
1878000 |
2012-08-01 ~ 2014-07-31 |
Enhancement Technologies for Advanced CMOS - Subproject 1 : Electrical Characterization of MOS Structures with Ultra-thin Gate Insulators Grown on Non-planar Si Substrate (2/3)
NSC100-2221-E-002-055-MY3 |
Hwu, Jenn-Gwo |
1159000 |
2012-08-01 ~ 2014-07-31 |
Main-project : Enhancement Technologies for Advanced CMOS(3/3)
NSC100-2221-E-002-057-MY3 |
Hwu, Jenn-Gwo |
1693000 |
2013-08-01 ~ 2014-07-31 |
Enhancement Technologies for Advanced CMOS - Subproject 1 : Electrical Characterization of MOS Structures with Ultra-thin Gate Insulators Grown on Non-planar Si Substrate (3/3)
NSC100-2221-E-002-055-MY3 |
Hwu, Jenn-Gwo |
1336000 |
2013-08-01 ~ 2014-07-31 |
Analysis and Device Application of the Non-uniform Electrical Characteristics in Ultra-thin Gate Oxides (1/3)
NSC102-2221-E-002-183-MY3 |
Hwu, Jenn-Gwo |
1407000 |
2013-08-01 ~ 2016-07-31 |
Analysis and Device Application of the Non-uniform Electrical Characteristics in Ultra-thin Gate Oxides (2/3)
NSC 102-2221-E-002-183-MY3 |
Hwu, Jenn-Gwo |
1527000 |
2014-08-01 ~ 2016-07-31 |
Energy Saving Transistor and Memory Technology - Main Project & Subproject 1: Energy Saving MOS Structures for Volatile Memory (1/3)
MOST 103-2221-E-002-252-MY3 |
Hwu, Jenn-Gwo |
2513000 |
2014-08-01 ~ 2017-07-31 |
Analysis and Device Application of the Non-uniform Electrical Characteristics in Ultra-thin Gate Oxides (3/3)
NSC 102-2221-E-002-183-MY3 |
Hwu, Jenn-Gwo |
1527000 |
2015-08-01 ~ 2016-07-31 |
Energy Saving Transistor and Memory Technology - Main Project & Subproject 1: Energy Saving MOS Structures for Volatile Memory (2/3)
MOST 103-2221-E-002-252-MY3 |
Hwu, Jenn-Gwo |
2576000 |
2015-08-01 ~ 2017-07-31 |
Energy Saving Transistor and Memory Technology - Main Project & Subproject 1: Energy Saving MOS Structures for Volatile Memory (3/3)
MOST 103-2221-E-002-252-MY3 |
Hwu, Jenn-Gwo |
2573000 |
2016-08-01 ~ 2017-07-31 |
Gate Tunneling Induced Deep Depletion Characteristic and Device Coupling Applications of MOS Structure (1/3)
MOST 105-2221-E-002-180-MY3 |
Hwu, Jenn-Gwo |
1422000 |
2016-08-01 ~ 2019-07-31 |
Gate Tunneling Induced Deep Depletion Characteristic and Device Coupling Applications of MOS Structure (2/3)
MOST 105-2221-E-002-180-MY3 |
Hwu, Jenn-Gwo |
1577000 |
2017-08-01 ~ 2019-07-31 |
Process Development and Memory Application of MOS Structures with Tip Si Substrate (1/3)
MOST-106-2221-E-002-196-MY3 |
Hwu, Jenn-Gwo |
1431000 |
2017-08-01 ~ 2020-07-31 |
Gate Tunneling Induced Deep Depletion Characteristic and Device Coupling Applications of MOS Structure (3/3)
MOST 105-2221-E-002-180-MY3 |
Hwu, Jenn-Gwo |
1717000 |
2018-08-01 ~ 2019-07-31 |
Process Development and Memory Application of MOS Structures with Tip Si Substrate (2/3)
MOST 106-2221-E-002-196-MY3 |
Hwu, Jenn-Gwo |
1374000 |
2018-08-01 ~ 2020-07-31 |
Address：No.1, Sec. 4, Roosevelt Road, Taipei, Taiwan 106