At the most prominent electronic device conferences, IEDM and VLSI, Professor Chee-Wee Liu from the NTU Graduate Institute of Electronics Engineering (GIEE) has published a significant number of papers. In recent years, he has authored 31 IEDM papers and 18 VLSI papers. Notably, his 2021 VLSI paper was selected as a highlight paper and featured in the Nature Electronics Research Highlight (NTU Newsletter Issue 1491, NTU HIGHLIGHTS No. 87). Furthermore, his 2021 IEDM paper received the prestigious Roger A. Haken Best Student Paper Award, marking a first for a Taiwanese student (NTU Newsletter Issue 1550). At the latest 2023 IEEE Symposium on VLSI Technology, five out of six papers from TSMC had first authors who were students of Professor Liu, with one co-supervised by Professor Min-Hung Li from the Graduate School of Advanced Technology. These achievements at this year's VLSI symposium set a record for educational institutions in Taiwan.

Recently, Professor Liu's pioneering and world-leading research has yielded three significant outcomes: (1) Integration of extremely high-κ gate stacks with highly stacked channels [1] (see Figure 1); the transistor drive current sets the world record. (2) Development of the world's first standard a-IGZO GAA nanosheet FET [2] (see Figure 2). (3) Utilization of superlattice HZO grown on the n+Ge structure [3] featuring a high 2Pr of 73μC/cm2 and a high 2Ec of 5.8MV/cm, successfully create the world's first stacked GeSi nanosheet FeFET [4] (as shown in Figure 3), exhibiting a large memory window of 1.8 V at a low write voltage of 2 V.