The major research interest of the Center include: 2D material, 2D devices, band structure analysis and simulation, emerging Si- & SiGe-based transistor, nanosheet transistor, backend interconnect, graphene, self-assembled monolayer molecule, high-K dielectric deposition, stacking of 3D electronics, ferroelectric material & memory, atomic layer technologies, negative capacitance FET, quantum computing using Si qubit, and synchrotron radiation photoemission studies on high-k/semiconductor interfaces.